| Citation: |
Dai Yang, Huang Yinglong, Liu Wei, Ma Long, Yang Fuhua, Wang Liangchen, Zeng Yiping, Zheng Houzhi. A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT[J]. Journal of Semiconductors, 2007, 28(3): 332-336.
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Dai Y, Huang Y L, Liu W, Ma L, Yang F H, Wang L C, Zeng Y P, Zheng H Z. A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT[J]. Chin. J. Semicond., 2007, 28(3): 332.
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A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT
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Abstract
A technology for the monolithic integration of resonant tunneling diodes (RTDs) and high electron mobility transistors (HEMTs) is developed.Molecular beam epitaxy is used to grow an RTD on a HEMT structure on GaAs substrate.The RTD has a room temperature peak-to-valley ratio of 5.2∶1 with a peak current density of 22.5kA/cm2.The HEMT has a 1μm gate length with a -1V threshold voltage.A logic circuit called a monostable-to-bistable transition logic element (MOBILE) circuit is developed.The experimental result confirms that the fabricated logic circuit operates successfully with frequency operations of up to 2GHz. -
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