| Citation: |
Li Zunchao, Jiang Yaolin, Wu Jianmin. Dual Material Gate SOI MOSFET with a Single Halo[J]. Journal of Semiconductors, 2007, 28(3): 327-331.
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Li Z C, Jiang Y L, Wu J M. Dual Material Gate SOI MOSFET with a Single Halo[J]. Chin. J. Semicond., 2007, 28(3): 327.
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Dual Material Gate SOI MOSFET with a Single Halo
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Abstract
In order to suppress drain-induced barrier lowering in dual material gate SOI MOSFETs,halo doping is used in the channel near the source.Two-dimensional analytical models of surface potential and threshold voltage for the novel SOI MOSFET are developed based on the explicit solution of the two-dimensional Poisson’s equation.Its characteristic improvement is investigated.It is concluded that the novel structure exhibits better suppression of drain-induced barrier lowering and higher carrier transport efficiency than conventional dual material gate SOI MOSFETs.Its drain-induced barrier lowering decreases with increasing halo doping concentration but does not change monotonically with halo length.The analytical models agree well with the two-dimensional device simulator MEDICI.-
Keywords:
- dual material gate,
- SOI,
- threshold voltage,
- analytical model
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References
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Proportional views
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