LETTERS
Abstract: To improve the total-dose radiation hardness,silicon-on-insulator (SOI) wafers fabricated by the separation-by-implanted-oxygen (SIMOX) method are modified by Si ion implantation into the buried oxide with a post anneal.The ID-VG characteristics can be tested with the pseudo-MOSFET method before and after radiation.The results show that a proper Si-ion-implantation method can enhance the total-dose radiation tolerance of the materials.
Key words: SIMOX, SOI, Si ion implantation, total-dose radiation effect, pseudo-MOS
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Received: 18 August 2015 Revised: 03 November 2006 Online: Published: 01 March 2007
| Citation: |
Yang Hui, Zhang Enxia, Zhang Zhengxuan. Effects of Si Ion Implantation on the Total-Dose Radiation Properties of SIMOX SOI Materials[J]. Journal of Semiconductors, 2007, 28(3): 323-326.
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Yang H, Zhang E X, Zhang Z X. Effects of Si Ion Implantation on the Total-Dose Radiation Properties of SIMOX SOI Materials[J]. Chin. J. Semicond., 2007, 28(3): 323.
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