| Citation: |
Zhang Jianjun, Hu Zengxin, Gu Shibin, Zhao Ying, Geng Xinhua. Hydrogenation of Polycrystalline SiGe Thin Films by Hot Wire Technique[J]. Journal of Semiconductors, 2007, 28(3): 317-322.
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Zhang J J, Hu Z X, Gu S B, Zhao Y, Geng X H. Hydrogenation of Polycrystalline SiGe Thin Films by Hot Wire Technique[J]. Chin. J. Semicond., 2007, 28(3): 317.
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Hydrogenation of Polycrystalline SiGe Thin Films by Hot Wire Technique
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Abstract
An optimized condition for defect passivation by the hot-wire technique was established.Effects of hydrogenation for polycrystalline SiGe (poly-Si1-xGex) thin films were estimated by investigating the dark conductivity and activation energy that derive from the conductivity as a function of the temperature.The results show that this technique can effectively reduce defects present in poly-Si1-xGex films.By optimizing the substrate and filament temperatures,the treatment can be accomplished in a short time of 20～30min,which is considerably shorter than other hydrogenation techniques.-
Keywords:
- hot-wire,
- hydrogenation,
- polycrystalline SiGe
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References
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Proportional views
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