Abstract: The influence of polarization-induced electric fields on the electron distribution and the optical properties of intersubband transitions (ISBT) in AlxGa1-xN/GaN coupled double quantum wells (DQWs) is investigated by self-consistent calculation.It is found that the polarization-induced potential drop leads to an asymmetric potential profile of AlxGa1-xN/GaN DQWs even though the two wells have the same width and depth.The polarization effects result in a very large Stark shift between the odd and even order subbands,thus shortening the wavelength of the ISBT between the first odd order and the second even order (1odd-2even) subbands.Meanwhile,the electron distribution becomes asymmetric due to the polarization effects,and the absorption coefficient of the 1odd-2even ISBT decreases with increasing polarization field discontinuity.

Key words: AlxGa1-xN/GaN DQWs, intersubband transition, polarization field discontinuity