PAPERS
Tan P H, Luo X D, Ge W K, Xu Z Y, Zhang Y, Mascarenhas A, Xin H P and Tu C W
Abstract: The transitions of E0,E0+Δ0, and E+ in dilute GaAs1-xNx alloys with x=0.10%,0.22%,0.36%,and 0.62% are observed by micro-photoluminescence.Resonant Raman scattering results further confirm that they are from the intrinsic emissions in the studied dilute GaAsN alloys rather than some localized exciton emissions in the GaAsN alloys.The results show that the nitrogen-induced E+ and E0+Δ0 transitions in GaAsN alloys intersect at a nitrogen content of about 0.16%.It is demonstrated that a small amount of isoelectronic doping combined with micro-photoluminescence allows direct observation of above band gap transitions that are not usually accessible in photoluminescence.
Key words: GaAsN, resonant Raman scattering, photoluminescence, bandgap, isoelectronic doping
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Received: 20 August 2015 Revised: Online: Published: 01 March 2006
| Citation: |
Tan P H, Luo X D, Ge W K, Xu Z Y, Zhang Y, Mascarenhas A, Xin H P, Tu C W. Resonant Raman Scattering and Photoluminescence Emissions from Above Bandgap Levels in Dilute GaAsN Alloys[J]. Journal of Semiconductors, 2006, 27(3): 397-402.
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Tan P H, Luo X D, Ge W K, Xu Z Y, Zhang Y, Mascarenhas A, Xin H P, Tu C W. Resonant Raman Scattering and Photoluminescence Emissions from Above Bandgap Levels in Dilute GaAsN Alloys[J]. Chin. J. Semicond., 2006, 27(3): 397.
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