Chin. J. Semicond. > 1993, Volume 14 > Issue 9 > 573-578
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为SIMOX SOI结构的硅膜和二氧化硅埋层厚度模型

牛国富 and 阮刚

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    Received: 20 August 2015 Revised: Online: Published: 01 September 1993

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      Article Navigation >  Journal of Semiconductors  > 1993  >  14(9): 573-578
      牛国富, 阮刚. 为SIMOX SOI结构的硅膜和二氧化硅埋层厚度模型[J]. 半导体学报(英文版), 1993, 14(9): 573-578.
      Citation:
      牛国富, 阮刚. 为SIMOX SOI结构的硅膜和二氧化硅埋层厚度模型[J]. 半导体学报(英文版), 1993, 14(9): 573-578.
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      • Received Date: 2015-08-20

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