Chin. J. Semicond. > 2004, Volume 25 > Issue 3 > 358-360

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用三层胶工艺X射线光刻制作T型栅

孙加兴 , 叶甜春 , 陈大鹏 , 谢常青 and 伊福庭

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Key words: X射线光刻, PHEMT, T型栅, 三层胶工艺

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    Received: 19 August 2015 Revised: Online: Published: 01 March 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(3): 358-360
      孙加兴, 叶甜春, 陈大鹏, 谢常青, 伊福庭. 用三层胶工艺X射线光刻制作T型栅[J]. 半导体学报(英文版), 2004, 25(3): 358-360.
      Citation:
      孙加兴, 叶甜春, 陈大鹏, 谢常青, 伊福庭. 用三层胶工艺X射线光刻制作T型栅[J]. 半导体学报(英文版), 2004, 25(3): 358-360.
      shu

      • Received Date: 2015-08-19

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