A Q-Enhanced CMOS RF Filter for Multi-Band Wireless Communications

Gao Zhiqiang; Yu Mingyan; Ma Jianguo; Ye Yizheng

Chin. J. Semicond. > 2007, Volume 28 > Issue 5 > 670-675

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A Q-Enhanced CMOS RF Filter for Multi-Band Wireless Communications

Gao Zhiqiang, Yu Mingyan, Ma Jianguo and Ye Yizheng

+ Author Affiliations

Abstract: An RF bandpass filter with a Q-enhancement active inductor is presented.The design technique for a tunable Q-enhancement CMOS active inductor operating in the wide RF-band is described.Moreover,issues related to noise and stability of the active inductor are explained.The filter was fabricated in 018μm CMOS technology,and the circuit occupied an active area of only 150μm×200μm.Measurement results show that the filter centered at 2.44GHz with about 60MHz bandwidth (3dB) is tunable in center frequency from about 2.07 to 2.44GHz.The 1dB compression point is -15dBm while consuming 10.8mW of DC power,and a maximum quality factor of 103 is attained at the center frequency of 2.07GHz.

Key words: active inductor, RF bandpass filter, 1dB compression point, quality factor, CMOS process

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Received: 18 August 2015 Revised: 17 January 2007 Online: Published: 01 May 2007

An RF bandpass filter with a Q-enhancement active inductor is presented.The design technique for a tunable Q-enhancement CMOS active inductor operating in the wide RF-band is described.Moreover,issues related to noise and stability of the active inductor are explained.The filter was fabricated in 018μm CMOS technology,and the circuit occupied an active area of only 150μm×200μm.Measurement results show that the filter centered at 2.44GHz with about 60MHz bandwidth (3dB) is tunable in center frequency from about 2.07 to 2.44GHz.The 1dB compression point is -15dBm while consuming 10.8mW of DC power,and a maximum quality factor of 103 is attained at the center frequency of 2.07GHz.

A Q-Enhanced CMOS RF Filter for Multi-Band Wireless Communications

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