Chin. J. Semicond. > 2001, Volume 22 > Issue 2 > 166-170

PDF

Key words: MOCVD, InGaN, 光致发光(PL), 扫描电镜(SEM)

  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2390 Times PDF downloads: 1095 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 February 2001

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      闫华, 卢励吾, 王占国. MOCVD生长的InGaN合金的性质[J]. 半导体学报(英文版), 2001, 22(2): 166-170.
      Citation:
      闫华, 卢励吾, 王占国. MOCVD生长的InGaN合金的性质[J]. 半导体学报(英文版), 2001, 22(2): 166-170.

      • Received Date: 2015-08-19

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return