Chin. J. Semicond. > 2001, Volume 22 > Issue 2 > 166-170
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MOCVD生长的InGaN合金的性质

闫华 , 卢励吾 and 王占国

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Key words: MOCVD, InGaN, 光致发光(PL), 扫描电镜(SEM)

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    Received: 19 August 2015 Revised: Online: Published: 01 February 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(2): 166-170
      闫华, 卢励吾, 王占国. MOCVD生长的InGaN合金的性质[J]. 半导体学报(英文版), 2001, 22(2): 166-170.
      Citation:
      闫华, 卢励吾, 王占国. MOCVD生长的InGaN合金的性质[J]. 半导体学报(英文版), 2001, 22(2): 166-170.
      shu

      • Received Date: 2015-08-19

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