Citation: |
闫华, 卢励吾, 王占国. MOCVD生长的InGaN合金的性质[J]. 半导体学报(英文版), 2001, 22(2): 166-170.
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Proportional views
Key words: MOCVD, InGaN, 光致发光(PL), 扫描电镜(SEM)
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Received: 19 August 2015 Revised: Online: Published: 01 February 2001
Citation: |
闫华, 卢励吾, 王占国. MOCVD生长的InGaN合金的性质[J]. 半导体学报(英文版), 2001, 22(2): 166-170.
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