Chin. J. Semicond. > 1986, Volume 7 > Issue 6 > 573-581
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一种高性能16K(2K×8)NMOS-SRAM的设计与分析

徐葭生 , 张明宝 , 杨肇敏 and 张钟宣

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    Received: 20 August 2015 Revised: Online: Published: 01 June 1986

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      Article Navigation >  Journal of Semiconductors  > 1986  >  7(6): 573-581
      徐葭生, 张明宝, 杨肇敏, 张钟宣. 一种高性能16K(2K×8)NMOS-SRAM的设计与分析[J]. 半导体学报(英文版), 1986, 7(6): 573-581.
      Citation:
      徐葭生, 张明宝, 杨肇敏, 张钟宣. 一种高性能16K(2K×8)NMOS-SRAM的设计与分析[J]. 半导体学报(英文版), 1986, 7(6): 573-581.
      shu

      • Received Date: 2015-08-20

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