Chin. J. Semicond. > 2002, Volume 23 > Issue 10 > 1031-1036
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采用源极增强带带隧穿热电子注入编程的新型p沟选择分裂位线NOR快闪存贮器(英文)

潘立阳 , 朱钧 , 刘楷 , 刘志宏 and 曾莹

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Key words: 快闪存贮器, 带带隧穿, 分裂位线NOR, 源极增强带带隧穿热电子注入, 位线串扰

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    Received: 19 August 2015 Revised: Online: Published: 01 October 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(10): 1031-1036
      潘立阳, 朱钧, 刘楷, 刘志宏, 曾莹. 采用源极增强带带隧穿热电子注入编程的新型p沟选择分裂位线NOR快闪存贮器(英文)[J]. 半导体学报(英文版), 2002, 23(10): 1031-1036.
      Citation:
      潘立阳, 朱钧, 刘楷, 刘志宏, 曾莹. 采用源极增强带带隧穿热电子注入编程的新型p沟选择分裂位线NOR快闪存贮器(英文)[J]. 半导体学报(英文版), 2002, 23(10): 1031-1036.
      shu

      • Received Date: 2015-08-19

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