Citation: |
Fang Jian, Jiang Huaping, Qiao Ming, Zhang Bo, Li Zhaoji. A Static-State Model of NPT-IGBTs with Localized Lifetime Control[J]. Journal of Semiconductors, 2006, 27(5): 857-863.
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Fang J, Jiang H P, Qiao M, Zhang B, Li Z J. A Static-State Model of NPT-IGBTs with Localized Lifetime Control[J]. Chin. J. Semicond., 2006, 27(5): 857.
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A Static-State Model of NPT-IGBTs with Localized Lifetime Control
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Abstract
A static-state model of NPT-IGBTs with localized lifetime control is proposed,the results of which fit 2D simulation.With this model,the forward characteristics of localized lifetime control NPT-IGBT influenced by the parameters of localized low-lifetime region are discussed in detail.We also systematically explain why the optimized locations of low-lifetime region are different by different localized lifetime control methods in previous reports. -
References
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