Abstract: The equivalent oxide thickness (EOT) of an HfO2 high kdielectric is extracted in two steps.First,a dual-frequency technique is employed for the C-V curve to overcome the effects of leakage current and substrate resistance.Second,an approach using flat-band capacitance is demonstrated for extracting the EOT of a high kdielectric,without the effects of inversion or accumulation capacitance.The relative error between the EOT extracted by this two-step approach and by the quantum corrected Poisson equation is less than 5%,thus validating the approach.

Key words: high-kdielectric, equivalent oxide thickness, HfO2