Chin. J. Semicond. > 1982, Volume 3 > Issue 2 > 102-106
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饱和电容法快速确定体产生寿命和表面产生速度

张秀淼

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    Received: 20 August 2015 Revised: Online: Published: 01 February 1982

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      Article Navigation >  Journal of Semiconductors  > 1982  >  3(2): 102-106
      张秀淼. 饱和电容法快速确定体产生寿命和表面产生速度[J]. 半导体学报(英文版), 1982, 3(2): 102-106.
      Citation:
      张秀淼. 饱和电容法快速确定体产生寿命和表面产生速度[J]. 半导体学报(英文版), 1982, 3(2): 102-106.
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      • Received Date: 2015-08-20

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