Chin. J. Semicond. > 1982, Volume 3 > Issue 2 > 107-112
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应用SEM和V-I特性研究1.3μmInGaAsP/InP DH激光器中掺杂的影响

葛玉如 , 高淑芬 , 王莉 , 汪孝杰 , 张盛廉 and 朱龙德

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    Received: 20 August 2015 Revised: Online: Published: 01 February 1982

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      Article Navigation >  Journal of Semiconductors  > 1982  >  3(2): 107-112
      葛玉如, 高淑芬, 王莉, 汪孝杰, 张盛廉, 朱龙德. 应用SEM和V-I特性研究1.3μmInGaAsP/InP DH激光器中掺杂的影响[J]. 半导体学报(英文版), 1982, 3(2): 107-112.
      Citation:
      葛玉如, 高淑芬, 王莉, 汪孝杰, 张盛廉, 朱龙德. 应用SEM和V-I特性研究1.3μmInGaAsP/InP DH激光器中掺杂的影响[J]. 半导体学报(英文版), 1982, 3(2): 107-112.
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      • Received Date: 2015-08-20

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