| Citation: |
JIA Hong-yong, LIU Zhi-nong, LI Gao-qing, QIAN Pei-xin. SiGe HBT Class AB Power Amplifier for Wireless Communications[J]. Journal of Semiconductors, 2002, 23(9): 921-924.
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JIA Hong-yong, LIU Zhi-nong, LI Gao-qing, QIAN Pei-xin. 2002: SiGe HBT Class AB Power Amplifier for Wireless Communications. Journal of Semiconductors, 23(9): 921-924.
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SiGe HBT Class AB Power Amplifier for Wireless Communications
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Abstract
Good performance SiGe power amplifiers applicable to wireless communications are demonstrated. The output power can reach more than 30 dBm in class B mode. And in class AB mode, the output power at 1dB compression point (P1dB) is 24 dBm, the output third order intercept (TOI) power is 39 dBm under Vcc of 4 V. The highest power added efficiency (PAE) and PAE at 1 dB compression point are 34% and 25%, respectively. The adjacent channel power rejection for CDMA signal is more than 42 dBc, which complies with IS95 specification.
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Keywords:
- SiGe,
- HBT,
- microwave power amplifier
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References
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Proportional views
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