Chin. J. Semicond. > 1996, Volume 17 > Issue 7 > 506-512
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微氮硅单晶中新施主的形成特性

杨德仁，樊瑞新，李立本，阙端麟

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    Received: 18 August 2015 Revised: Online: Published: 01 July 1996

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      Article Navigation >  Journal of Semiconductors  > 1996  >  17(7): 506-512
      杨德仁，樊瑞新，李立本，阙端麟. 微氮硅单晶中新施主的形成特性[J]. 半导体学报(英文版), 1996, 17(7): 506-512.
      Citation:
      杨德仁，樊瑞新，李立本，阙端麟. 微氮硅单晶中新施主的形成特性[J]. 半导体学报(英文版), 1996, 17(7): 506-512.
      shu

      • Received Date: 2015-08-18

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