13.7～14.5GHz Internally-Matched GaAs High Power Device

Wu Xiaoshuai; Yang Ruixia; Yan Deli; Liu Yuewei; Jia Kejin; He Dawei; Yang Kewu

Chin. J. Semicond. > 2007, Volume 28 > Issue 7 > 1104-1106

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13.7～14.5GHz Internally-Matched GaAs High Power Device

Wu Xiaoshuai, Yang Ruixia, Yan Deli, Liu Yuewei, Jia Kejin, He Dawei and Yang Kewu

+ Author Affiliations

Abstract: A 19.2mm gate-width GaAs power HFET has been fabricated with improvements in the technology of device structure and passivation.The internally-matched device with two chips yields an output power greater than 42dBm(158W) with more than 7dB power gain,more than 35% PAE,and more than 90% co-efficiency across the band of 13.7～14.5GHz with Vds=9V and Pin=35dBm.At 14.3GHz,an output power of 42.54dBm (17.9W) and power gain of 7.54dB were achieved.

Key words: device, internally matching, HFET, power combination

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Received: 18 August 2015 Revised: 29 January 2007 Online: Published: 01 July 2007

A 19.2mm gate-width GaAs power HFET has been fabricated with improvements in the technology of device structure and passivation.The internally-matched device with two chips yields an output power greater than 42dBm(158W) with more than 7dB power gain,more than 35% PAE,and more than 90% co-efficiency across the band of 13.7～14.5GHz with Vds=9V and Pin=35dBm.At 14.3GHz,an output power of 42.54dBm (17.9W) and power gain of 7.54dB were achieved.

13.7～14.5GHz Internally-Matched GaAs High Power Device

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