Chin. J. Semicond. > 1997, Volume 18 > Issue 2 > 85-90
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优化生长的In_xGa_(1-x)As缓冲层上双势垒In_yGa_(1-y)As/Al_zGa_(1-z)As/GaAs/Al_zGa_(1-z)As多量子阱应变状态测量

王小军 , 郑联喜 , 肖智博 , 王玉田 , 胡雄伟 and 王启明

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    董阳, 王康林, 丁训民, 来冰, 曹先安, 侯晓远. β-GaS钝化的GaAs表面的光电子能谱[J]. 半导体学报(英文版), 2000, 21(11): 1080-1085.
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    Received: 19 August 2015 Revised: Online: Published: 01 February 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(2): 85-90
      董阳, 王康林, 丁训民, 来冰, 曹先安, 侯晓远. β-GaS钝化的GaAs表面的光电子能谱[J]. 半导体学报(英文版), 2000, 21(11): 1080-1085.
      Citation:
      王小军, 郑联喜, 肖智博, 王玉田, 胡雄伟, 王启明. 优化生长的In_xGa_(1-x)As缓冲层上双势垒In_yGa_(1-y)As/Al_zGa_(1-z)As/GaAs/Al_zGa_(1-z)As多量子阱应变状态测量[J]. 半导体学报(英文版), 1997, 18(2): 85-90.
      shu

      • Received Date: 2015-08-19

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