Chin. J. Semicond. > 2005, Volume 26 > Issue 9 > 1818-1822
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埋空隙PSOI结构的耐压分析

段宝兴 , 张波 , 李肇基 and 罗小蓉

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Key words: RESURF结构, APSOI, 自热效应, 表面电场, 击穿电压

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    Received: 18 August 2015 Revised: Online: Published: 01 September 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(9): 1818-1822
      段宝兴, 张波, 李肇基, 罗小蓉. 埋空隙PSOI结构的耐压分析[J]. 半导体学报(英文版), 2005, 26(9): 1818-1822.
      Citation:
      段宝兴, 张波, 李肇基, 罗小蓉. 埋空隙PSOI结构的耐压分析[J]. 半导体学报(英文版), 2005, 26(9): 1818-1822.
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      • Received Date: 2015-08-18

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