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Volume 26, Issue 9, Sep 2005
Table of Content
CONTENTS
Effect of Silicon-on-Insulator Substrate on Residual Strain in 3C-SiC Films
Wang Xiaofeng, Huang Fengyi, Sun Guosheng, Wang Lei, Zhao Wanshun, Zeng Yiping, Li Haiou, and Duan Xiaofeng
Chin. J. Semicond.  2005, 26(9): 1681-1687
Abstract PDF

Compressively Strained InGaAs/InGaAsP Quantum Well Distributed Feedback Laser at 1.74μm
Pan Jiaoqing, Wang Wei, Zhu Hongliang, Zhao Qian, Wang Baojun, Zhou Fan, and Wang Lufeng
Chin. J. Semicond.  2005, 26(9): 1688-1691
Abstract PDF

High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures
Wang Xiaofeng, Zeng Yiping, Wang Baoqiang, Zhu Zhanping, Du Xiaoqing, Li Min, and Chang Benkang
Chin. J. Semicond.  2005, 26(9): 1692-1698
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A Into-Plane Rotating Micromirror Actuated by a Hybrid Electrostatic Driving Structure
Wu Wengang, Chen Qinghua, Yin Dongqing, Yan Guizhen, Chen Zhangyuan, Hao Yilong, and Xu Anshi
Chin. J. Semicond.  2005, 26(9): 1698-1704
Abstract PDF

Low Phase Noise Quadrature Oscillators Using New Injection Locked Technique
Chi Baoyong, Zhu Xiaolei, Wang Ziqiang, and Wang Zhihua
Chin. J. Semicond.  2005, 26(9): 1705-1710
Abstract PDF

Design of Down Scalers in Mixed-Signal GHz Frequency Synthesizer
Xu Yong, Wang Zhigong, Qiu Yinghua, Li Zhiqun, Hu Qingsheng, and Min Rui
Chin. J. Semicond.  2005, 26(9): 1711-1715
Abstract PDF

Performance Analysis of RF Spiral Inductor with Gradually Changed Metal Width and Space
Wang Yong, Shi Yanling, Liu Yun, Ding Yanfang, Tang Shenqun, Zhu Jun, Chen Shoumian, and Zhao Yuhang
Chin. J. Semicond.  2005, 26(9): 1716-1721
Abstract PDF

Fabrication and Simulation of Silicon-on-Insulator Structure with Si3N4 as a Buried Insulator
Liu Qibin, Lin Qing, Liu Weili, Feng Songlin, and Song Zhitang
Chin. J. Semicond.  2005, 26(9): 1722-1726
Abstract PDF

Capacitive Microwave MEMS Switch
Zhang Jinwen, Jin Yufeng, Hao Yilong, Wang Wei, Tian Dayu, and Wang Yangyuan
Chin. J. Semicond.  2005, 26(9): 1727-1730
Abstract PDF

A 2.4GHz CMOS Monolithic Transceiver Front-End for IEEE 802.11b Wireless LAN Applications
Chi Baoyong, Shi Bingxue, and Wang Zhihua
Chin. J. Semicond.  2005, 26(9): 1731-1739
Abstract PDF

应变异质结构中超薄中间层的应变协调作用
陈涌海, 杨少延, 王占国
Chin. J. Semicond.  2005, 26(9): 1740-1743
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超晶格半导体材料的光磁电效应(I)
罗诗裕, 邵明珠
Chin. J. Semicond.  2005, 26(9): 1744-1748
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快速热退火对高应变InGaAs/Ga As量子阱的影响
苗振华, 徐应强, 张石勇, 吴东海, 赵欢, 牛智川
Chin. J. Semicond.  2005, 26(9): 1749-1752
Abstract PDF

原生直拉单晶硅中的铜沉淀规律席珍强
席珍强, 杨德仁, 陈君, 阙端麟, H.J.Moeller
Chin. J. Semicond.  2005, 26(9): 1753-1759
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碲锌镉晶片中位错与Te沉淀的透射电子显微分析
曾冬梅, 王涛, 介万奇
Chin. J. Semicond.  2005, 26(9): 1760-1763
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复合式热屏对Φ200mm CZSi单晶生长速率和氧含量的影响
任丙彦, 赵龙, 傅洪波, 曹中谦, 张学强
Chin. J. Semicond.  2005, 26(9): 1764-1767
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导电流体在水平磁场中的粘度
张雯, 刘彩池, 王海云
Chin. J. Semicond.  2005, 26(9): 1768-1772
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(111)晶向碲锌镉晶片双面腐蚀的对比
刘从峰, 方维政, 涂步华, 孙士文, 杨建荣
Chin. J. Semicond.  2005, 26(9): 1773-1777
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聚合物/有机小分子异质结掺杂型电致发光二极管及其发射机制
聂海, 张波, 唐先忠, 李元勋
Chin. J. Semicond.  2005, 26(9): 1778-1782
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一种新型结构的InGaP/GaAs负阻异质结晶体管
郭维廉, 齐海涛, 张世林, 钟, 鸣, 梁惠来, 毛陆虹, 宋瑞良, 周均铭, 王文新, C.Jagadish, 傅岚
Chin. J. Semicond.  2005, 26(9): 1783-1788
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跨导为325mS/mm的AlGaN/GaN HFET器件
张志国, 杨瑞霞, 王, 勇, 冯, 震, 杨克武
Chin. J. Semicond.  2005, 26(9): 1789-1792
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808nm InGaAsP单量子阱激光器激射波长的温度依赖性
张永明, 钟景昌, 路国光, 秦, 莉, 赵英杰, 郝永芹, 姜晓光
Chin. J. Semicond.  2005, 26(9): 1793-1797
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1×32硅基二氧化硅阵列波导光栅的研制
龙文华, 李广波, 贾科淼, 屈红昌, 唐衍哲, 吴亚明, 杨建义, 王跃林
Chin. J. Semicond.  2005, 26(9): 1798-1803
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C波段0.75mm AlGaN/GaN功率器件
陈晓娟, 刘新宇, 和致经, 刘, 建, 吴德馨
Chin. J. Semicond.  2005, 26(9): 1804-1807
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一种适用于开关电容电路的MOS开关栅增压电路
张剑云, 李建, 郭亚炜, 沈泊, 张卫
Chin. J. Semicond.  2005, 26(9): 1808-1812
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深亚微米pMOS器件的HCI和NBTI耦合效应与物理机制
刘红侠, 郝跃
Chin. J. Semicond.  2005, 26(9): 1813-1817
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埋空隙PSOI结构的耐压分析
段宝兴, 张波, 李肇基, 罗小蓉
Chin. J. Semicond.  2005, 26(9): 1818-1822
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LDMOS的局部电热效应分析
李梅芝, 韦光萍, 陈星弼
Chin. J. Semicond.  2005, 26(9): 1823-1828
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一种抗辐照SOI反相器
赵洪辰, 海潮和, 韩郑生, 钱鹤, 司红
Chin. J. Semicond.  2005, 26(9): 1829-1832
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逆导型GCT阻断特性的分析与设计
王彩琳, 高, 勇, 张昌利
Chin. J. Semicond.  2005, 26(9): 1833-1837
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一种用于流水线模数转换器的电容失配校准方法
李福乐, 王红梅, 李冬梅, 王志华
Chin. J. Semicond.  2005, 26(9): 1838-1842
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ISO 14443单芯片读卡机放大、滤波和量化电路的设计
陈良生, 洪志良, 李联
Chin. J. Semicond.  2005, 26(9): 1843-1847
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一种DC-DC芯片内建可测性设计
王红义, 来新泉, 李玉山, 陈富吉
Chin. J. Semicond.  2005, 26(9): 1848-1853
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一种低延迟低功耗的片上全局互连方法
刘祥远, 陈书明
Chin. J. Semicond.  2005, 26(9): 1854-1859
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Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes
Niu Zhichuan, Han Qin, Ni Haiqiao, Yang Xiaohong, Xu Yingqiang, Du Yun, Zhang Shiyong, Peng Hongling, Zhao Huan, Wu Donghai, Li Sh
Chin. J. Semicond.  2005, 26(9): 1860-1864
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