Wang Xiaofeng, Zeng Yiping, Wang Baoqiang, Zhu Zhanping, Du Xiaoqing, Li Min, and Chang Benkang. High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures[J]. Journal of Semiconductors, 2005, 26(9): 1692-1698. ****W X feng, Z Y ping, W B qiang, Z Z ping, D X qing, L Min, and Chang Benkang and C B kang. High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures[J]. Chin. J. Semicond., 2005, 26(9): 1692.
| Citation:
|
Wang Xiaofeng, Zeng Yiping, Wang Baoqiang, Zhu Zhanping, Du Xiaoqing, Li Min, and Chang Benkang. High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures[J]. Journal of Semiconductors, 2005, 26(9): 1692-1698.
****
W X feng, Z Y ping, W B qiang, Z Z ping, D X qing, L Min, and Chang Benkang and C B kang. High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures[J]. Chin. J. Semicond., 2005, 26(9): 1692.
|
Wang Xiaofeng, Zeng Yiping, Wang Baoqiang, Zhu Zhanping, Du Xiaoqing, Li Min, and Chang Benkang. High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures[J]. Journal of Semiconductors, 2005, 26(9): 1692-1698. ****W X feng, Z Y ping, W B qiang, Z Z ping, D X qing, L Min, and Chang Benkang and C B kang. High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures[J]. Chin. J. Semicond., 2005, 26(9): 1692.
| Citation:
|
Wang Xiaofeng, Zeng Yiping, Wang Baoqiang, Zhu Zhanping, Du Xiaoqing, Li Min, and Chang Benkang. High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures[J]. Journal of Semiconductors, 2005, 26(9): 1692-1698.
****
W X feng, Z Y ping, W B qiang, Z Z ping, D X qing, L Min, and Chang Benkang and C B kang. High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures[J]. Chin. J. Semicond., 2005, 26(9): 1692.
|
DownLoad: