Chin. J. Semicond. > 2005, Volume 26 > Issue 9 > 1789-1792
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跨导为325mS/mm的AlGaN/GaN HFET器件

张志国 , 杨瑞霞 , 王 , 勇 , 冯 , 震 and 杨克武

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Key words: AlGaN/GaN,  HFET, 跨导, 直流特性, 场板

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    Received: 18 August 2015 Revised: Online: Published: 01 September 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(9): 1789-1792
      张志国, 杨瑞霞, 王, 勇, 冯, 震, 杨克武. 跨导为325mS/mm的AlGaN/GaN HFET器件[J]. 半导体学报(英文版), 2005, 26(9): 1789-1792.
      Citation:
      张志国, 杨瑞霞, 王, 勇, 冯, 震, 杨克武. 跨导为325mS/mm的AlGaN/GaN HFET器件[J]. 半导体学报(英文版), 2005, 26(9): 1789-1792.
      shu

      • Received Date: 2015-08-18

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