Chin. J. Semicond. > 2005, Volume 26 > Issue 9 > 1818-1822

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Key words: RESURF结构APSOI自热效应表面电场击穿电压

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    Received: 18 August 2015 Revised: Online: Published: 01 September 2005

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      段宝兴, 张波, 李肇基, 罗小蓉. 埋空隙PSOI结构的耐压分析[J]. 半导体学报(英文版), 2005, 26(9): 1818-1822.
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      段宝兴, 张波, 李肇基, 罗小蓉. 埋空隙PSOI结构的耐压分析[J]. 半导体学报(英文版), 2005, 26(9): 1818-1822.

      • Received Date: 2015-08-18

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