Chin. J. Semicond. > 2005, Volume 26 > Issue 9 > 1813-1817
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深亚微米pMOS器件的HCI和NBTI耦合效应与物理机制

刘红侠 and 郝跃

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Key words: 深亚微米pMOS器件, 热载流子注入, 负偏压温度不稳定性, 界面态, 氧化层固定正电荷

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    Received: 18 August 2015 Revised: Online: Published: 01 September 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(9): 1813-1817
      刘红侠, 郝跃. 深亚微米pMOS器件的HCI和NBTI耦合效应与物理机制[J]. 半导体学报(英文版), 2005, 26(9): 1813-1817.
      Citation:
      刘红侠, 郝跃. 深亚微米pMOS器件的HCI和NBTI耦合效应与物理机制[J]. 半导体学报(英文版), 2005, 26(9): 1813-1817.
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      • Received Date: 2015-08-18

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