Fabrication and Simulation of Silicon-on-Insulator Structure with Si3N4 as a Buried Insulator

Liu Qibin , Lin Qing , Liu Weili , Feng Songlin and and Song Zhitang

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Key words: Si3N4, new SOI structures, self-heating effects

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Received: 18 August 2015 Revised: Online: Published: 01 September 2005

Article Navigation > Journal of Semiconductors > 2005 > 26(9): 1722-1726

Liu Qibin, Lin Qing, Liu Weili, Feng Songlin, and Song Zhitang. Fabrication and Simulation of Silicon-on-Insulator Structure with Si3N4 as a Buried Insulator[J]. 半导体学报(英文版), 2005, 26(9): 1722-1726.

Citation:

Liu Qibin, Lin Qing, Liu Weili, Feng Songlin, and Song Zhitang. Fabrication and Simulation of Silicon-on-Insulator Structure with Si3N4 as a Buried Insulator[J]. 半导体学报(英文版), 2005, 26(9): 1722-1726.