Chin. J. Semicond. > 2005, Volume 26 > Issue 9 > 1804-1807
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C波段0.75mm AlGaN/GaN功率器件

陈晓娟 , 刘新宇 , 和致经 , 刘 , 建 and 吴德馨

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Key words: AlGaN/GaN HEMT, 微波输出功率, Si3N4, 钝化

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    Received: 18 August 2015 Revised: Online: Published: 01 September 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(9): 1804-1807
      陈晓娟, 刘新宇, 和致经, 刘, 建, 吴德馨. C波段0.75mm AlGaN/GaN功率器件[J]. 半导体学报(英文版), 2005, 26(9): 1804-1807.
      Citation:
      陈晓娟, 刘新宇, 和致经, 刘, 建, 吴德馨. C波段0.75mm AlGaN/GaN功率器件[J]. 半导体学报(英文版), 2005, 26(9): 1804-1807.
      shu

      • Received Date: 2015-08-18

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