Chin. J. Semicond. > 2005, Volume 26 > Issue 9 > 1753-1759
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原生直拉单晶硅中的铜沉淀规律席珍强

席珍强 , 杨德仁 , 陈君 , 阙端麟 and H.J.Moeller

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Key words: 单晶硅, 铜, 沉淀

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    Received: 18 August 2015 Revised: Online: Published: 01 September 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(9): 1753-1759
      席珍强, 杨德仁, 陈君, 阙端麟, H.J.Moeller. 原生直拉单晶硅中的铜沉淀规律席珍强[J]. 半导体学报(英文版), 2005, 26(9): 1753-1759.
      Citation:
      席珍强, 杨德仁, 陈君, 阙端麟, H.J.Moeller. 原生直拉单晶硅中的铜沉淀规律席珍强[J]. 半导体学报(英文版), 2005, 26(9): 1753-1759.
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      • Received Date: 2015-08-18

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