Chin. J. Semicond. > 2005, Volume 26 > Issue 9 > 1749-1752
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快速热退火对高应变InGaAs/Ga As量子阱的影响

苗振华 , 徐应强 , 张石勇 , 吴东海 , 赵欢 and 牛智川

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Key words: 分子束外延, 高应变In0.45Ga0.55As/GaAs量子阱, 快速热退火, 室温光致发光

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    Received: 18 August 2015 Revised: Online: Published: 01 September 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(9): 1749-1752
      苗振华, 徐应强, 张石勇, 吴东海, 赵欢, 牛智川. 快速热退火对高应变InGaAs/Ga As量子阱的影响[J]. 半导体学报(英文版), 2005, 26(9): 1749-1752.
      Citation:
      苗振华, 徐应强, 张石勇, 吴东海, 赵欢, 牛智川. 快速热退火对高应变InGaAs/Ga As量子阱的影响[J]. 半导体学报(英文版), 2005, 26(9): 1749-1752.
      shu

      • Received Date: 2015-08-18

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