Chin. J. Semicond. > 2005, Volume 26 > Issue 9 > 1760-1763
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碲锌镉晶片中位错与Te沉淀的透射电子显微分析

曾冬梅 , 王涛 and 介万奇

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Key words: 透射电子显微镜, 棱柱位错环, Te沉淀

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    Received: 18 August 2015 Revised: Online: Published: 01 September 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(9): 1760-1763
      曾冬梅, 王涛, 介万奇. 碲锌镉晶片中位错与Te沉淀的透射电子显微分析[J]. 半导体学报(英文版), 2005, 26(9): 1760-1763.
      Citation:
      曾冬梅, 王涛, 介万奇. 碲锌镉晶片中位错与Te沉淀的透射电子显微分析[J]. 半导体学报(英文版), 2005, 26(9): 1760-1763.
      shu

      • Received Date: 2015-08-18

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