Chin. J. Semicond. > 2005, Volume 26 > Issue 9 > 1764-1767
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复合式热屏对Φ200mm CZSi单晶生长速率和氧含量的影响

任丙彦 , 赵龙 , 傅洪波 , 曹中谦 and 张学强

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Key words: 热屏, 氧含量, 温度梯度, 拉速

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    Received: 18 August 2015 Revised: Online: Published: 01 September 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(9): 1764-1767
      任丙彦, 赵龙, 傅洪波, 曹中谦, 张学强. 复合式热屏对Φ200mm CZSi单晶生长速率和氧含量的影响[J]. 半导体学报(英文版), 2005, 26(9): 1764-1767.
      Citation:
      任丙彦, 赵龙, 傅洪波, 曹中谦, 张学强. 复合式热屏对Φ200mm CZSi单晶生长速率和氧含量的影响[J]. 半导体学报(英文版), 2005, 26(9): 1764-1767.
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      • Received Date: 2015-08-18

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