Chin. J. Semicond. > 2005, Volume 26 > Issue 9 > 1773-1777
|

CONTENTS

(111)晶向碲锌镉晶片双面腐蚀的对比

刘从峰 , 方维政 , 涂步华 , 孙士文 and 杨建荣

+ Author Affiliations

PDF

Key words: 碲锌镉, 位错, 腐蚀坑密度

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2401 Times PDF downloads: 1362 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: Online: Published: 01 September 2005

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2005  >  26(9): 1773-1777
      刘从峰, 方维政, 涂步华, 孙士文, 杨建荣. (111)晶向碲锌镉晶片双面腐蚀的对比[J]. 半导体学报(英文版), 2005, 26(9): 1773-1777.
      Citation:
      刘从峰, 方维政, 涂步华, 孙士文, 杨建荣. (111)晶向碲锌镉晶片双面腐蚀的对比[J]. 半导体学报(英文版), 2005, 26(9): 1773-1777.
      shu

      • Received Date: 2015-08-18

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return