Chin. J. Semicond. > 2005, Volume 26 > Issue 9 > 1681-1687

Effect of Silicon-on-Insulator Substrate on Residual Strain in 3C-SiC Films

Wang Xiaofeng , Huang Fengyi , Sun Guosheng , Wang Lei , Zhao Wanshun , Zeng Yiping , Li Haiou and and Duan Xiaofeng

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Key words: Raman, strain relaxation, force balance principle, near coincidence lattice model

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Received: 18 August 2015 Revised: Online: Published: 01 September 2005

Article Navigation > Journal of Semiconductors > 2005 > 26(9): 1681-1687

Wang Xiaofeng, Huang Fengyi, Sun Guosheng, Wang Lei, Zhao Wanshun, Zeng Yiping, Li Haiou, and Duan Xiaofeng. Effect of Silicon-on-Insulator Substrate on Residual Strain in 3C-SiC Films[J]. 半导体学报(英文版), 2005, 26(9): 1681-1687.

Citation:

Wang Xiaofeng, Huang Fengyi, Sun Guosheng, Wang Lei, Zhao Wanshun, Zeng Yiping, Li Haiou, and Duan Xiaofeng. Effect of Silicon-on-Insulator Substrate on Residual Strain in 3C-SiC Films[J]. 半导体学报(英文版), 2005, 26(9): 1681-1687.

Wang Xiaofeng, Huang Fengyi, Sun Guosheng, Wang Lei, Zhao Wanshun, Zeng Yiping, Li Haiou, and Duan Xiaofeng. Effect of Silicon-on-Insulator Substrate on Residual Strain in 3C-SiC Films[J]. 半导体学报(英文版), 2005, 26(9): 1681-1687.

Citation:

Wang Xiaofeng, Huang Fengyi, Sun Guosheng, Wang Lei, Zhao Wanshun, Zeng Yiping, Li Haiou, and Duan Xiaofeng. Effect of Silicon-on-Insulator Substrate on Residual Strain in 3C-SiC Films[J]. 半导体学报(英文版), 2005, 26(9): 1681-1687.

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