Chin. J. Semicond. > 2005, Volume 26 > Issue 9 > 1860-1864

Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes

Niu Zhichuan , Han Qin , Ni Haiqiao , Yang Xiaohong , Xu Yingqiang , Du Yun , Zhang Shiyong , Peng Hongling , Zhao Huan , Wu Donghai and Li Sh

+ Author Affiliations

Key words: GaAs based materials, GaInNAs quantum wells, molecular beam epitaxy, laser diodes

Search

GET CITATION

shu

Export: BibTex EndNote

Share:

Article Metrics

Article views: 2401 Times PDF downloads: 1085 Times Cited by: 0 Times

History

Received: 18 August 2015 Revised: Online: Published: 01 September 2005

Article Navigation > Journal of Semiconductors > 2005 > 26(9): 1860-1864

Niu Zhichuan, Han Qin, Ni Haiqiao, Yang Xiaohong, Xu Yingqiang, Du Yun, Zhang Shiyong, Peng Hongling, Zhao Huan, Wu Donghai, Li Sh. Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes[J]. 半导体学报(英文版), 2005, 26(9): 1860-1864.

Citation:

Niu Zhichuan, Han Qin, Ni Haiqiao, Yang Xiaohong, Xu Yingqiang, Du Yun, Zhang Shiyong, Peng Hongling, Zhao Huan, Wu Donghai, Li Sh. Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes[J]. 半导体学报(英文版), 2005, 26(9): 1860-1864.

Niu Zhichuan, Han Qin, Ni Haiqiao, Yang Xiaohong, Xu Yingqiang, Du Yun, Zhang Shiyong, Peng Hongling, Zhao Huan, Wu Donghai, Li Sh. Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes[J]. 半导体学报(英文版), 2005, 26(9): 1860-1864.

Citation:

Niu Zhichuan, Han Qin, Ni Haiqiao, Yang Xiaohong, Xu Yingqiang, Du Yun, Zhang Shiyong, Peng Hongling, Zhao Huan, Wu Donghai, Li Sh. Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes[J]. 半导体学报(英文版), 2005, 26(9): 1860-1864.

PDF( 428 KB)