Chin. J. Semicond. > 2005, Volume 26 > Issue 9 > 1793-1797
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808nm InGaAsP单量子阱激光器激射波长的温度依赖性

张永明 , 钟景昌 , 路国光 , 秦 , 莉 , 赵英杰 , 郝永芹 and 姜晓光

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Key words: 单量子阱激光器, 808nm,  InGaAsP, 温度特性

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    Received: 18 August 2015 Revised: Online: Published: 01 September 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(9): 1793-1797
      张永明, 钟景昌, 路国光, 秦, 莉, 赵英杰, 郝永芹, 姜晓光. 808nm InGaAsP单量子阱激光器激射波长的温度依赖性[J]. 半导体学报(英文版), 2005, 26(9): 1793-1797.
      Citation:
      张永明, 钟景昌, 路国光, 秦, 莉, 赵英杰, 郝永芹, 姜晓光. 808nm InGaAsP单量子阱激光器激射波长的温度依赖性[J]. 半导体学报(英文版), 2005, 26(9): 1793-1797.
      shu

      • Received Date: 2015-08-18

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