Chin. J. Semicond. > 2005, Volume 26 > Issue 9 > 1688-1691

Compressively Strained InGaAs/InGaAsP Quantum Well Distributed Feedback Laser at 1.74μm

Pan Jiaoqing , Wang Wei , Zhu Hongliang , Zhao Qian , Wang Baojun , Zhou Fan and and Wang Lufeng

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Key words: DFB laser, compressive strain, quantum well

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Received: 18 August 2015 Revised: Online: Published: 01 September 2005

Article Navigation > Journal of Semiconductors > 2005 > 26(9): 1688-1691

Pan Jiaoqing, Wang Wei, Zhu Hongliang, Zhao Qian, Wang Baojun, Zhou Fan, and Wang Lufeng. Compressively Strained InGaAs/InGaAsP Quantum Well Distributed Feedback Laser at 1.74μm[J]. 半导体学报(英文版), 2005, 26(9): 1688-1691.

Citation:

Pan Jiaoqing, Wang Wei, Zhu Hongliang, Zhao Qian, Wang Baojun, Zhou Fan, and Wang Lufeng. Compressively Strained InGaAs/InGaAsP Quantum Well Distributed Feedback Laser at 1.74μm[J]. 半导体学报(英文版), 2005, 26(9): 1688-1691.

Pan Jiaoqing, Wang Wei, Zhu Hongliang, Zhao Qian, Wang Baojun, Zhou Fan, and Wang Lufeng. Compressively Strained InGaAs/InGaAsP Quantum Well Distributed Feedback Laser at 1.74μm[J]. 半导体学报(英文版), 2005, 26(9): 1688-1691.

Citation:

Pan Jiaoqing, Wang Wei, Zhu Hongliang, Zhao Qian, Wang Baojun, Zhou Fan, and Wang Lufeng. Compressively Strained InGaAs/InGaAsP Quantum Well Distributed Feedback Laser at 1.74μm[J]. 半导体学报(英文版), 2005, 26(9): 1688-1691.

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