Citation: |
王子欧, 卫建林, 毛凌锋, 许铭真, 谭长华. MOSFET不同厚度薄栅老化中 SILC的机制(英文)[J]. 半导体学报(英文版), 2001, 22(4): 414-417.
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References
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Proportional views
Key words: 应力感应漏电, 栅氧化层
Article views: 2883 Times PDF downloads: 1045 Times Cited by: 0 Times
Received: 20 August 2015 Revised: Online: Published: 01 April 2001
Citation: |
王子欧, 卫建林, 毛凌锋, 许铭真, 谭长华. MOSFET不同厚度薄栅老化中 SILC的机制(英文)[J]. 半导体学报(英文版), 2001, 22(4): 414-417.
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