Chin. J. Semicond. > 2001, Volume 22 > Issue 4 > 414-417
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MOSFET不同厚度薄栅老化中 SILC的机制(英文)

王子欧 , 卫建林 , 毛凌锋 , 许铭真 and 谭长华

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Key words: 应力感应漏电, 栅氧化层

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    Received: 20 August 2015 Revised: Online: Published: 01 April 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(4): 414-417
      王子欧, 卫建林, 毛凌锋, 许铭真, 谭长华. MOSFET不同厚度薄栅老化中 SILC的机制(英文)[J]. 半导体学报(英文版), 2001, 22(4): 414-417.
      Citation:
      王子欧, 卫建林, 毛凌锋, 许铭真, 谭长华. MOSFET不同厚度薄栅老化中 SILC的机制(英文)[J]. 半导体学报(英文版), 2001, 22(4): 414-417.
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      • Received Date: 2015-08-20

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