Chin. J. Semicond. > 2001, Volume 22 > Issue 4 > 418-422
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ZnO∶Tb纳米晶的制备、结构与发光性质

刘舒曼 , 刘峰奇 , 郭海清 , 张志华 and 王占国

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Key words: 纳米晶, 稀土, 光致发光

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    Received: 20 August 2015 Revised: Online: Published: 01 April 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(4): 418-422
      刘舒曼, 刘峰奇, 郭海清, 张志华, 王占国. ZnO∶Tb纳米晶的制备、结构与发光性质[J]. 半导体学报(英文版), 2001, 22(4): 418-422.
      Citation:
      刘舒曼, 刘峰奇, 郭海清, 张志华, 王占国. ZnO∶Tb纳米晶的制备、结构与发光性质[J]. 半导体学报(英文版), 2001, 22(4): 418-422.
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      • Received Date: 2015-08-20

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