Chin. J. Semicond. > 1986, Volume 7 > Issue 4 > 427-432
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由脉冲MOS结构的I-C瞬态曲线确定产生寿命的深度分布

张秀淼

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    Received: 20 August 2015 Revised: Online: Published: 01 April 1986

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      Article Navigation >  Journal of Semiconductors  > 1986  >  7(4): 427-432
      张秀淼. 由脉冲MOS结构的I-C瞬态曲线确定产生寿命的深度分布[J]. 半导体学报(英文版), 1986, 7(4): 427-432.
      Citation:
      张秀淼. 由脉冲MOS结构的I-C瞬态曲线确定产生寿命的深度分布[J]. 半导体学报(英文版), 1986, 7(4): 427-432.
      shu

      • Received Date: 2015-08-20

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