Journal of Semiconductors

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Volume 7, Issue 4, Apr 1986

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CONTENTS

LEC掺In-GaAs单晶中的一种新型缺陷

何晖, 褚一鸣, 林兰英

Chin. J. Semicond. 1986, 7(4): 341-345

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(4): 341.

何晖, 褚一鸣, 林兰英. LEC掺In-GaAs单晶中的一种新型缺陷[J]. Chin. J. Semicond., 1986, 7(4): 341..Export: BibTex EndNote

何晖, 褚一鸣, 林兰英. LEC掺In-GaAs单晶中的一种新型缺陷[J]. Chin. J. Semicond., 1986, 7(4): 341...

肖特基二极管导纳的研究及其在能级测量中的应用

高小平, 周洁, 许振嘉

Chin. J. Semicond. 1986, 7(4): 346-356

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(4): 346.

高小平, 周洁, 许振嘉. 肖特基二极管导纳的研究及其在能级测量中的应用[J]. Chin. J. Semicond., 1986, 7(4): 346..Export: BibTex EndNote

高小平, 周洁, 许振嘉. 肖特基二极管导纳的研究及其在能级测量中的应用[J]. Chin. J. Semicond., 1986, 7(4): 346...

重审运动学低能电子衍射方法和Si(001)2×1结构

赵汝光, 杨威生

Chin. J. Semicond. 1986, 7(4): 357-362

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(4): 357.

赵汝光, 杨威生. 重审运动学低能电子衍射方法和Si(001)2×1结构[J]. Chin. J. Semicond., 1986, 7(4): 357..Export: BibTex EndNote

赵汝光, 杨威生. 重审运动学低能电子衍射方法和Si(001)2×1结构[J]. Chin. J. Semicond., 1986, 7(4): 357...

n-Si低剂量B~+、P~+离子注入产生的缺陷及其退火特性

陈建新, 李名复, 李言谨

Chin. J. Semicond. 1986, 7(4): 363-373

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(4): 363.

陈建新, 李名复, 李言谨. n-Si低剂量B~+、P~+离子注入产生的缺陷及其退火特性[J]. Chin. J. Semicond., 1986, 7(4): 363..Export: BibTex EndNote

陈建新, 李名复, 李言谨. n-Si低剂量B~+、P~+离子注入产生的缺陷及其退火特性[J]. Chin. J. Semicond., 1986, 7(4): 363...

CVD BPSG膜的沉积及其回流机理

曾天亮, 江志庚

Chin. J. Semicond. 1986, 7(4): 374-379

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(4): 374.

曾天亮, 江志庚. CVD BPSG膜的沉积及其回流机理[J]. Chin. J. Semicond., 1986, 7(4): 374..Export: BibTex EndNote

曾天亮, 江志庚. CVD BPSG膜的沉积及其回流机理[J]. Chin. J. Semicond., 1986, 7(4): 374...

用计入相干势近似修正的LCAO方法计算合金的能隙变化

陆奋

Chin. J. Semicond. 1986, 7(4): 380-386

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(4): 380.

陆奋. 用计入相干势近似修正的LCAO方法计算合金的能隙变化[J]. Chin. J. Semicond., 1986, 7(4): 380..Export: BibTex EndNote

陆奋. 用计入相干势近似修正的LCAO方法计算合金的能隙变化[J]. Chin. J. Semicond., 1986, 7(4): 380...

Si:Cr中的E能级的计算

王永良

Chin. J. Semicond. 1986, 7(4): 387-396

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(4): 387.

王永良. Si:Cr中的E能级的计算[J]. Chin. J. Semicond., 1986, 7(4): 387..Export: BibTex EndNote

王永良. Si:Cr中的E能级的计算[J]. Chin. J. Semicond., 1986, 7(4): 387...

质子注入直拉硅中缺陷的研究

李灿国, 姚秀琛, 秦国刚

Chin. J. Semicond. 1986, 7(4): 397-406

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(4): 397.

李灿国, 姚秀琛, 秦国刚. 质子注入直拉硅中缺陷的研究[J]. Chin. J. Semicond., 1986, 7(4): 397..Export: BibTex EndNote

李灿国, 姚秀琛, 秦国刚. 质子注入直拉硅中缺陷的研究[J]. Chin. J. Semicond., 1986, 7(4): 397...

氧在GaP(-1-1-1)表面上的吸附特性

邢益荣, W.Ranke

Chin. J. Semicond. 1986, 7(4): 407-411

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(4): 407.

邢益荣, W.Ranke. 氧在GaP(-1-1-1)表面上的吸附特性[J]. Chin. J. Semicond., 1986, 7(4): 407..Export: BibTex EndNote

邢益荣, W.Ranke. 氧在GaP(-1-1-1)表面上的吸附特性[J]. Chin. J. Semicond., 1986, 7(4): 407...

LSIS-II自动布图系统中的布局子系统

程可行, 庄文君

Chin. J. Semicond. 1986, 7(4): 412-418

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(4): 412.

程可行, 庄文君. LSIS-II自动布图系统中的布局子系统[J]. Chin. J. Semicond., 1986, 7(4): 412..Export: BibTex EndNote

程可行, 庄文君. LSIS-II自动布图系统中的布局子系统[J]. Chin. J. Semicond., 1986, 7(4): 412...

B样条函数器件插值模型在电路模拟程序SPICE中的应用

严志新, 王碧娟, 姚林声

Chin. J. Semicond. 1986, 7(4): 419-426

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(4): 419.

严志新, 王碧娟, 姚林声. B样条函数器件插值模型在电路模拟程序SPICE中的应用[J]. Chin. J. Semicond., 1986, 7(4): 419..Export: BibTex EndNote

严志新, 王碧娟, 姚林声. B样条函数器件插值模型在电路模拟程序SPICE中的应用[J]. Chin. J. Semicond., 1986, 7(4): 419...

由脉冲MOS结构的I-C瞬态曲线确定产生寿命的深度分布

张秀淼

Chin. J. Semicond. 1986, 7(4): 427-432

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(4): 427.

张秀淼. 由脉冲MOS结构的I-C瞬态曲线确定产生寿命的深度分布[J]. Chin. J. Semicond., 1986, 7(4): 427..Export: BibTex EndNote

张秀淼. 由脉冲MOS结构的I-C瞬态曲线确定产生寿命的深度分布[J]. Chin. J. Semicond., 1986, 7(4): 427...

氧在a-GaAs(:H)表面吸附的光电子谱研究

汪兆平

Chin. J. Semicond. 1986, 7(4): 433-436

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(4): 433.

汪兆平. 氧在a-GaAs(:H)表面吸附的光电子谱研究[J]. Chin. J. Semicond., 1986, 7(4): 433..Export: BibTex EndNote

汪兆平. 氧在a-GaAs(:H)表面吸附的光电子谱研究[J]. Chin. J. Semicond., 1986, 7(4): 433...

氢气区熔硅单晶中的新红外吸收谱峰

轩振国, 张美蓉, 游志朴

Chin. J. Semicond. 1986, 7(4): 437-440

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(4): 437.

轩振国, 张美蓉, 游志朴. 氢气区熔硅单晶中的新红外吸收谱峰[J]. Chin. J. Semicond., 1986, 7(4): 437..Export: BibTex EndNote

轩振国, 张美蓉, 游志朴. 氢气区熔硅单晶中的新红外吸收谱峰[J]. Chin. J. Semicond., 1986, 7(4): 437...

光电化学法测量N型半导体材料扩散长度

邵永富, 陈自姚

Chin. J. Semicond. 1986, 7(4): 441-445

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(4): 441.

邵永富, 陈自姚. 光电化学法测量N型半导体材料扩散长度[J]. Chin. J. Semicond., 1986, 7(4): 441..Export: BibTex EndNote

邵永富, 陈自姚. 光电化学法测量N型半导体材料扩散长度[J]. Chin. J. Semicond., 1986, 7(4): 441...

多晶硅膜的高压氧化

张爱珍, 王阳元

Chin. J. Semicond. 1986, 7(4): 446-449

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(4): 446.

张爱珍, 王阳元. 多晶硅膜的高压氧化[J]. Chin. J. Semicond., 1986, 7(4): 446..Export: BibTex EndNote

张爱珍, 王阳元. 多晶硅膜的高压氧化[J]. Chin. J. Semicond., 1986, 7(4): 446...

GaAs- Al_xGa_(1-x)As DH发光管的压力调频研究

赵学恕, 李国华, 汪兆平, 韩和相, 石志文, 王丽君, 唐汝明

Chin. J. Semicond. 1986, 7(4): 450-452

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1986, 7(4): 450.

赵学恕, 李国华, 汪兆平, 韩和相, 石志文, 王丽君, 唐汝明. GaAs- Al_xGa_(1-x)As DH发光管的压力调频研究[J]. Chin. J. Semicond., 1986, 7(4): 450..Export: BibTex EndNote

赵学恕, 李国华, 汪兆平, 韩和相, 石志文, 王丽君, 唐汝明. GaAs- Al_xGa_(1-x)As DH发光管的压力调频研究[J]. Chin. J. Semicond., 1986, 7(4): 450...

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