Chin. J. Semicond. > 1986, Volume 7 > Issue 4 > 363-373
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n-Si低剂量B~+、P~+离子注入产生的缺陷及其退火特性

陈建新 , 李名复 and 李言谨

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    Received: 20 August 2015 Revised: Online: Published: 01 April 1986

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      Article Navigation >  Journal of Semiconductors  > 1986  >  7(4): 363-373
      陈建新, 李名复, 李言谨. n-Si低剂量B~+、P~+离子注入产生的缺陷及其退火特性[J]. 半导体学报(英文版), 1986, 7(4): 363-373.
      Citation:
      陈建新, 李名复, 李言谨. n-Si低剂量B~+、P~+离子注入产生的缺陷及其退火特性[J]. 半导体学报(英文版), 1986, 7(4): 363-373.
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      • Received Date: 2015-08-20

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