Chin. J. Semicond. > 1986, Volume 7 > Issue 4 > 407-411
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氧在GaP(-1-1-1)表面上的吸附特性

邢益荣 and W.Ranke

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    Received: 20 August 2015 Revised: Online: Published: 01 April 1986

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      Article Navigation >  Journal of Semiconductors  > 1986  >  7(4): 407-411
      邢益荣, W.Ranke. 氧在GaP(-1-1-1)表面上的吸附特性[J]. 半导体学报(英文版), 1986, 7(4): 407-411.
      Citation:
      邢益荣, W.Ranke. 氧在GaP(-1-1-1)表面上的吸附特性[J]. 半导体学报(英文版), 1986, 7(4): 407-411.
      shu

      • Received Date: 2015-08-20

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