Chin. J. Semicond. > 1986, Volume 7 > Issue 4 > 357-362
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重审运动学低能电子衍射方法和Si(001)2×1结构

赵汝光 and 杨威生

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    Received: 20 August 2015 Revised: Online: Published: 01 April 1986

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      Article Navigation >  Journal of Semiconductors  > 1986  >  7(4): 357-362
      赵汝光, 杨威生. 重审运动学低能电子衍射方法和Si(001)2×1结构[J]. 半导体学报(英文版), 1986, 7(4): 357-362.
      Citation:
      赵汝光, 杨威生. 重审运动学低能电子衍射方法和Si(001)2×1结构[J]. 半导体学报(英文版), 1986, 7(4): 357-362.
      shu

      • Received Date: 2015-08-20

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