Chin. J. Semicond. > 1986, Volume 7 > Issue 4 > 437-440
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氢气区熔硅单晶中的新红外吸收谱峰

轩振国 , 张美蓉 and 游志朴

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    Received: 20 August 2015 Revised: Online: Published: 01 April 1986

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      Article Navigation >  Journal of Semiconductors  > 1986  >  7(4): 437-440
      轩振国, 张美蓉, 游志朴. 氢气区熔硅单晶中的新红外吸收谱峰[J]. 半导体学报(英文版), 1986, 7(4): 437-440.
      Citation:
      轩振国, 张美蓉, 游志朴. 氢气区熔硅单晶中的新红外吸收谱峰[J]. 半导体学报(英文版), 1986, 7(4): 437-440.
      shu

      • Received Date: 2015-08-20

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