Chin. J. Semicond. > 2001, Volume 22 > Issue 2 > 134-139
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高性能70nm CMOS器件(英文)

徐秋霞 , 钱鹤 , 殷华湘 , 贾林 , 季红浩 , 陈宝钦 , 朱亚江 and 刘明

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Key words: 高性能, 70nmCMOS器件, 源漏延伸区, 氮化栅氧化介质, 锗预无定形注入, 自对准硅化物

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    Received: 19 August 2015 Revised: Online: Published: 01 February 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(2): 134-139
      徐秋霞, 钱鹤, 殷华湘, 贾林, 季红浩, 陈宝钦, 朱亚江, 刘明. 高性能70nm CMOS器件(英文)[J]. 半导体学报(英文版), 2001, 22(2): 134-139.
      Citation:
      徐秋霞, 钱鹤, 殷华湘, 贾林, 季红浩, 陈宝钦, 朱亚江, 刘明. 高性能70nm CMOS器件(英文)[J]. 半导体学报(英文版), 2001, 22(2): 134-139.
      shu

      • Received Date: 2015-08-19

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