Chin. J. Semicond. > 2000, Volume 21 > Issue 9 > 857-861
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Novel Oxide Trap Behavior in Ultra Thin Gate and Its Study by PDO Method

王子欧 , 毛凌峰 , 卫建林 , 许铭真 and 谭长华

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Key words: Ultra Thin Gate

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    Received: 20 August 2015 Revised: Online: Published: 01 September 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(9): 857-861
      王子欧, 毛凌峰, 卫建林, 许铭真, 谭长华. Novel Oxide Trap Behavior in Ultra Thin Gate and Its Study by PDO Method[J]. 半导体学报(英文版), 2000, 21(9): 857-861.
      Citation:
      王子欧, 毛凌峰, 卫建林, 许铭真, 谭长华. Novel Oxide Trap Behavior in Ultra Thin Gate and Its Study by PDO Method[J]. 半导体学报(英文版), 2000, 21(9): 857-861.
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      • Received Date: 2015-08-20

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