Chin. J. Semicond. > 2003, Volume 24 > Issue 1 > 104-108
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全耗尽CMOS/SOI工艺

刘新宇 , 孙海峰 , 刘洪民 , 陈焕章 , 扈焕章 , 海潮和 , 和致经 and 吴德馨

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Key words: 全耗尽CMOS/SOI工艺, 氮化H2-O2合成薄栅氧, 双栅, 注Ge硅化物

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    Received: 20 August 2015 Revised: Online: Published: 01 January 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(1): 104-108
      刘新宇, 孙海峰, 刘洪民, 陈焕章, 扈焕章, 海潮和, 和致经, 吴德馨. 全耗尽CMOS/SOI工艺[J]. 半导体学报(英文版), 2003, 24(1): 104-108.
      Citation:
      刘新宇, 孙海峰, 刘洪民, 陈焕章, 扈焕章, 海潮和, 和致经, 吴德馨. 全耗尽CMOS/SOI工艺[J]. 半导体学报(英文版), 2003, 24(1): 104-108.
      shu

      • Received Date: 2015-08-20

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