Chin. J. Semicond. > 1990, Volume 11 > Issue 9 > 680-687
|

CONTENTS

Ge衬底上的Ⅱ-Ⅵ族化合物MBE生长研究

钟建国 , 谢钦熙 , 张恕明 , 乔怡敏 and 袁诗鑫

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2426 Times PDF downloads: 682 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 September 1990

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1990  >  11(9): 680-687
      钟建国, 谢钦熙, 张恕明, 乔怡敏, 袁诗鑫. Ge衬底上的Ⅱ-Ⅵ族化合物MBE生长研究[J]. 半导体学报(英文版), 1990, 11(9): 680-687.
      Citation:
      钟建国, 谢钦熙, 张恕明, 乔怡敏, 袁诗鑫. Ge衬底上的Ⅱ-Ⅵ族化合物MBE生长研究[J]. 半导体学报(英文版), 1990, 11(9): 680-687.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return