Chin. J. Semicond. > 2003, Volume 24 > Issue 11 > 1180-1184
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Al/SRO/Si结构中横向电压作用下的电荷俘获效应

于振瑞 , 杜金会 , 张加友 , 李长安 and Aceves M

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Key words: 富硅氧化硅, 电荷俘获效应, C-V测试, 诱导pn结

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    Received: 20 August 2015 Revised: Online: Published: 01 November 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(11): 1180-1184
      于振瑞, 杜金会, 张加友, 李长安, Aceves M. Al/SRO/Si结构中横向电压作用下的电荷俘获效应[J]. 半导体学报(英文版), 2003, 24(11): 1180-1184.
      Citation:
      于振瑞, 杜金会, 张加友, 李长安, Aceves M. Al/SRO/Si结构中横向电压作用下的电荷俘获效应[J]. 半导体学报(英文版), 2003, 24(11): 1180-1184.
      shu

      • Received Date: 2015-08-20

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